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Infineon HEXFET Type N-Channel MOSFET, 30 A, 80 V Enhancement, 4-Pin PQFN IRFH8311TRPBF

RS stock no.:: 222-4747
Mfr. Part No.:: IRFH8311TRPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 30 A, 80 V Enhancement, 4-Pin PQFN IRFH8311TRPBF

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Bulk discount available

Subtotal (1 pack of 15 units)*

R 266,31

(exc. VAT)

R 306,255

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

1,425 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
15 - 15	R 17.754	R 266.31
30 - 75	R 17.31	R 259.65
90 - 225	R 16.791	R 251.87
240 - 465	R 16.119	R 241.79
480 +	R 15.475	R 232.13

*price indicative

RS stock no.:: 222-4747
Mfr. Part No.:: IRFH8311TRPBF
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	80V
	Package Type	PQFN
	Series	HEXFET
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	2.1mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	30nC
	Maximum Power Dissipation Pd	96W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Length	5mm
	Height	1.17mm
	Standards/Approvals	RoHS
	Width	6.15 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 80V
	Package Type PQFN
	Series HEXFET
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 2.1mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 30nC
	Maximum Power Dissipation Pd 96W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Length 5mm
	Height 1.17mm
	Standards/Approvals RoHS
	Width 6.15 mm
	Automotive Standard No

Datasheet - IRFH8311TRPBF

The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDSon (<1.15 mΩ)

Low Thermal Resistance to PCB (<0.8°C/W)

100% Rg tested

Low Profile (<0.9 mm)

Infineon HEXFET Type N-Channel MOSFET, 30 A, 80 V Enhancement, 4-Pin PQFN IRFH8311TRPBF

FREE delivery for orders over R 1,500.00

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