MPN

Infineon Dual CoolMOS 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S4L22ATMA1

RS stock no.:: 222-4681
Mfr. Part No.:: IPG20N10S4L22ATMA1
Manufacturer:: Infineon

Infineon Dual CoolMOS 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S4L22ATMA1

Image representative of range

Bulk discount available

Subtotal (1 pack of 10 units)*

R 244,76

(exc. VAT)

R 281,47

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

Plus 7,850 unit(s) shipping from 30 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 - 10	R 24.476	R 244.76
20 - 90	R 23.864	R 238.64
100 - 240	R 23.148	R 231.48
250 - 490	R 22.222	R 222.22
500 +	R 21.333	R 213.33

*price indicative

RS stock no.:: 222-4681
Mfr. Part No.:: IPG20N10S4L22ATMA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	Power Transistor
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TDSON
	Series	CoolMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	22mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	60W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	21nC
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Operating Temperature	175°C
	Transistor Configuration	Dual
	Standards/Approvals	AEC-Q101
	Length	5.15mm
	Width	5.9 mm
	Height	1mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type Power Transistor
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 100V
	Package Type TDSON
	Series CoolMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 22mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 60W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 21nC
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Operating Temperature 175°C
	Transistor Configuration Dual
	Standards/Approvals AEC-Q101
	Length 5.15mm
	Width 5.9 mm
	Height 1mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

Datasheet - IPG20N10S4L22ATMA1

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)

MSL1 up to 260°C peak reflow AEC Q101 qualified

OptiMOS™ - power MOSFET for automotive applications

Infineon Dual CoolMOS 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S4L22ATMA1

FREE delivery for orders over R 1,500.00

Related links