Infineon Dual IPG20 2 Type N-Channel Power Transistor, 20 A, 40 V Enhancement, 8-Pin TDSON IPG20N04S408AATMA1
- RS stock no.:
- 218-3058
- Mfr. Part No.:
- IPG20N04S408AATMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 10 units)*
R 217,45
(exc. VAT)
R 250,07
(inc. VAT)
Add 80 units to get free delivery
In Stock
- 4,660 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 21.745 | R 217.45 |
| 20 - 90 | R 21.201 | R 212.01 |
| 100 - 240 | R 20.565 | R 205.65 |
| 250 - 490 | R 19.742 | R 197.42 |
| 500 + | R 18.952 | R 189.52 |
*price indicative
- RS stock no.:
- 218-3058
- Mfr. Part No.:
- IPG20N04S408AATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON | |
| Series | IPG20 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 65W | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 5.15mm | |
| Width | 5.9 mm | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON | ||
Series IPG20 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 65W | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 5.15mm | ||
Width 5.9 mm | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon 20V-40V N-Channel Automotive MOSFET. The exposed pad provides excellent thermal transfer (varies by die size).
Dual N-channel Normal Level - Enhancement mode
175°C operating temperature
100% Avalanche tested
Feasible for automatic optical inspection (AOI)
Related links
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- Infineon Dual OptiMOS 2 Type N-Channel Power Transistor 40 V Enhancement, 8-Pin TDSON
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