Infineon CoolMOS Type N-Channel MOSFET, 6 A, 700 V Enhancement, 3-Pin TO-220 IPA70R900P7SXKSA1

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Subtotal (1 pack of 15 units)*

R 216,135

(exc. VAT)

R 248,55

(inc. VAT)

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Units
Per unit
Per Pack*
15 - 15R 14.409R 216.14
30 - 75R 14.049R 210.74
90 - 225R 13.628R 204.42
240 - 465R 13.083R 196.25
480 +R 12.559R 188.39

*price indicative

Packaging Options:
RS stock no.:
222-4644
Mfr. Part No.:
IPA70R900P7SXKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

700V

Series

CoolMOS

Package Type

TO-220

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

900mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.

Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss

Product validation acc. JEDEC Standard

Low switching losses (Eoss)

Integrated ESD protection diode

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