Infineon CoolMOS N-Channel MOSFET, 6 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R900P7SAKMA1

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Subtotal (1 pack of 20 units)*

R 182,38

(exc. VAT)

R 209,74

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 20R 9.119R 182.38
40 - 80R 8.891R 177.82
100 - 220R 8.624R 172.48
240 - 480R 8.279R 165.58
500 +R 7.948R 158.96

*price indicative

Packaging Options:
RS stock no.:
222-4715
Mfr. Part No.:
IPSA70R900P7SAKMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

700V

Series

CoolMOS

Package Type

TO-251

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

900mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

16V

Typical Gate Charge Qg @ Vgs

6.8nC

Minimum Operating Temperature

-40°C

Forward Voltage Vf

900mV

Maximum Power Dissipation Pd

30.5W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.6mm

Height

6.1mm

Width

2.38mm

Automotive Standard

No

The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.

Product validation acc. JEDEC Standard

Low switching losses (Eoss)

Integrated ESD protection diode

Excellent thermal behaviour

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