Infineon CoolMOS N-Channel MOSFET, 41 A, 700 V Enhancement, 3-Pin TO-220 IPP65R225C7XKSA1
- RS stock no.:
- 219-6007
- Mfr. Part No.:
- IPP65R225C7XKSA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (5 units, in packs of 5)*
R 284,34
(exc. VAT)
R 326,99
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 510 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 56.868 | R 284.34 |
| 10 - 95 | R 55.446 | R 277.23 |
| 100 - 245 | R 53.782 | R 268.91 |
| 250 - 495 | R 51.63 | R 258.15 |
| 500 + | R 49.564 | R 247.82 |
*price indicative
- RS stock no.:
- 219-6007
- Mfr. Part No.:
- IPP65R225C7XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 41A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-220 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 225mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Forward Voltage Vf | 900mV | |
| Maximum Power Dissipation Pd | 63W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Standards/Approvals | No | |
| Width | 15.95mm | |
| Height | 4.57mm | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 41A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-220 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 225mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Forward Voltage Vf 900mV | ||
Maximum Power Dissipation Pd 63W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Standards/Approvals No | ||
Width 15.95mm | ||
Height 4.57mm | ||
Length 10.36mm | ||
Automotive Standard No | ||
The Infineon CoolMOS C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.
Improved safety margin and suitable for both SMPS and solar inverter applications
Lowest conduction losses/package
Low switching losses
Better light load efficiency
Increasing power density
Related links
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- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251