DiodesZetex DMT Type N-Channel MOSFET, 6.5 A, 60 V Enhancement, 6-Pin UDFN DMT6030LFCL-7
- RS stock no.:
- 222-2879
- Mfr. Part No.:
- DMT6030LFCL-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 177,225
(exc. VAT)
R 203,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,800 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 7.089 | R 177.23 |
| 50 - 75 | R 6.912 | R 172.80 |
| 100 - 225 | R 6.705 | R 167.63 |
| 250 - 975 | R 6.437 | R 160.93 |
| 1000 + | R 6.179 | R 154.48 |
*price indicative
- RS stock no.:
- 222-2879
- Mfr. Part No.:
- DMT6030LFCL-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMT | |
| Package Type | UDFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 25mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Power Dissipation Pd | 1.58W | |
| Typical Gate Charge Qg @ Vgs | 9.1nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.6mm | |
| Standards/Approvals | No | |
| Length | 1.6mm | |
| Width | 0.575 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMT | ||
Package Type UDFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 25mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Power Dissipation Pd 1.58W | ||
Typical Gate Charge Qg @ Vgs 9.1nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1.6mm | ||
Standards/Approvals No | ||
Length 1.6mm | ||
Width 0.575 mm | ||
Automotive Standard No | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
PCB Footprint of 2.56mm2
Totally Lead-Free & Fully RoHS Compliant
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