DiodesZetex Dual DMT Type N-Channel MOSFET, 7.7 A, 30 V Enhancement, 6-Pin UDFN-2020 DMT3020LFDBQ-7
- RS stock no.:
- 222-2871
- Mfr. Part No.:
- DMT3020LFDBQ-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 232,30
(exc. VAT)
R 267,15
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 5,775 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 9.292 | R 232.30 |
| 50 - 75 | R 9.06 | R 226.50 |
| 100 - 225 | R 8.788 | R 219.70 |
| 250 - 975 | R 8.437 | R 210.93 |
| 1000 + | R 8.099 | R 202.48 |
*price indicative
- RS stock no.:
- 222-2871
- Mfr. Part No.:
- DMT3020LFDBQ-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.7A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMT | |
| Package Type | UDFN-2020 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.02Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.7A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMT | ||
Package Type UDFN-2020 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.02Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.8W | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex Dual n-channel enhancement mode MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
Low Gate Threshold Voltage
Low On-Resistance
Totally Lead-Free & Fully RoHS Compliant
Related links
- DiodesZetex Dual DMT Type N-Channel MOSFET 30 V Enhancement, 6-Pin UDFN-2020
- DiodesZetex Dual 2 Type N-Channel MOSFET 6-Pin UDFN-2020
- DiodesZetex Dual 2 Type N-Channel MOSFET 6-Pin UDFN-2020 DMT3020UFDB-7
- DiodesZetex Dual DMP Type P-Channel MOSFET 20 V Enhancement, 6-Pin UDFN-2020
- DiodesZetex Dual DMP Type P-Channel MOSFET 20 V Enhancement, 6-Pin UDFN-2020 DMP2045UFDB-7
- DiodesZetex DMT Type N-Channel MOSFET 60 V Enhancement, 6-Pin UDFN
- DiodesZetex DMT Type N-Channel MOSFET 30 V Enhancement, 6-Pin UDFN
- DiodesZetex DMT Type N-Channel MOSFET 50 V Enhancement, 6-Pin UDFN