DiodesZetex DMT N-Channel MOSFET, 80 A, 60 V Enhancement, 8-Pin PowerDI3333 DMT6007LFG-7
- RS stock no.:
- 133-3320
- Mfr. Part No.:
- DMT6007LFG-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 243,32
(exc. VAT)
R 279,82
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 1,810 unit(s) shipping from 10 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 24.332 | R 243.32 |
| 50 - 240 | R 23.724 | R 237.24 |
| 250 - 490 | R 23.012 | R 230.12 |
| 500 - 990 | R 22.092 | R 220.92 |
| 1000 + | R 21.208 | R 212.08 |
*price indicative
- RS stock no.:
- 133-3320
- Mfr. Part No.:
- DMT6007LFG-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerDI3333 | |
| Series | DMT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 62.5W | |
| Typical Gate Charge Qg @ Vgs | 41.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 0.8mm | |
| Height | 0.85mm | |
| Width | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerDI3333 | ||
Series DMT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 62.5W | ||
Typical Gate Charge Qg @ Vgs 41.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 0.8mm | ||
Height 0.85mm | ||
Width 3.3mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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