DiodesZetex Dual DMT Type N-Channel MOSFET, 21.2 A, 40 V Enhancement, 8-Pin PowerDI3333-8 DMT4015LDV-7
- RS stock no.:
- 222-2875
- Mfr. Part No.:
- DMT4015LDV-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 284,825
(exc. VAT)
R 327,55
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,800 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 11.393 | R 284.83 |
| 50 - 75 | R 11.108 | R 277.70 |
| 100 - 225 | R 10.775 | R 269.38 |
| 250 - 975 | R 10.344 | R 258.60 |
| 1000 + | R 9.93 | R 248.25 |
*price indicative
- RS stock no.:
- 222-2875
- Mfr. Part No.:
- DMT4015LDV-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21.2A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerDI3333-8 | |
| Series | DMT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.02Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | 0.7V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101, AEC-Q100, AEC-Q200 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21.2A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerDI3333-8 | ||
Series DMT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.02Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf 0.7V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101, AEC-Q100, AEC-Q200 | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate
Related links
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