DiodesZetex DMT Type N-Channel MOSFET, 31.8 A, 60 V Enhancement, 8-Pin PowerDI3333 DMT6015LFVW-7
- RS stock no.:
- 222-2877
- Mfr. Part No.:
- DMT6015LFVW-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 184,275
(exc. VAT)
R 211,925
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,675 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 7.371 | R 184.28 |
| 50 - 75 | R 7.186 | R 179.65 |
| 100 - 225 | R 6.971 | R 174.28 |
| 250 - 975 | R 6.692 | R 167.30 |
| 1000 + | R 6.424 | R 160.60 |
*price indicative
- RS stock no.:
- 222-2877
- Mfr. Part No.:
- DMT6015LFVW-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 31.8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMT | |
| Package Type | PowerDI3333 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 15.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Power Dissipation Pd | 28.4W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.8 mm | |
| Height | 3.3mm | |
| Standards/Approvals | No | |
| Length | 3.05mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 31.8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMT | ||
Package Type PowerDI3333 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 15.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Power Dissipation Pd 28.4W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 0.8 mm | ||
Height 3.3mm | ||
Standards/Approvals No | ||
Length 3.05mm | ||
Automotive Standard No | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Low on-resistance
Small form factor thermally efficient package enables higher density end products
Wettable flank for improved optical inspection
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