DiodesZetex DMN Type N-Channel MOSFET, 900 mA, 20 V Enhancement, 3-Pin SOT-323 DMN2710UWQ-7
- RS stock no.:
- 222-2835
- Mfr. Part No.:
- DMN2710UWQ-7
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 pack of 50 units)*
R 113,05
(exc. VAT)
R 130,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,800 unit(s) shipping from 29 December 2025
- Plus 1,250 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | R 2.261 | R 113.05 |
| 100 - 200 | R 2.204 | R 110.20 |
| 250 - 450 | R 2.138 | R 106.90 |
| 500 - 950 | R 2.052 | R 102.60 |
| 1000 + | R 1.97 | R 98.50 |
*price indicative
- RS stock no.:
- 222-2835
- Mfr. Part No.:
- DMN2710UWQ-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 900mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMN | |
| Package Type | SOT-323 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 0.6W | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.35 mm | |
| Height | 1.1mm | |
| Length | 2.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 900mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMN | ||
Package Type SOT-323 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 0.6W | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 1.35 mm | ||
Height 1.1mm | ||
Length 2.2mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant
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