DiodesZetex DMN Type N-Channel MOSFET, 0.9 A, 20 V Enhancement, 3-Pin X1-DFN DMN2450UFD-7
- RS stock no.:
- 182-7197
- Mfr. Part No.:
- DMN2450UFD-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 100 units)*
R 106,70
(exc. VAT)
R 122,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 7,000 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 100 | R 1.067 | R 106.70 |
| 200 - 400 | R 1.04 | R 104.00 |
| 500 - 900 | R 1.009 | R 100.90 |
| 1000 - 1900 | R 0.968 | R 96.80 |
| 2000 + | R 0.93 | R 93.00 |
*price indicative
- RS stock no.:
- 182-7197
- Mfr. Part No.:
- DMN2450UFD-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 0.9A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | X1-DFN | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 890mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.7nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.25 mm | |
| Height | 0.48mm | |
| Length | 1.25mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 0.9A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type X1-DFN | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 890mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.7nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 1.25 mm | ||
Height 0.48mm | ||
Length 1.25mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V Max
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Power Management Functions
Battery Operated Systems and Solid-State Relays
Load Switch
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