onsemi NTBL050N65S Type N-Channel MOSFET, 49 A, 650 V Enhancement, 8-Pin H-PSOF NTBL050N65S3H
- RS stock no.:
- 221-6706
- Mfr. Part No.:
- NTBL050N65S3H
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 350,60
(exc. VAT)
R 403,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
Supply shortage
- Plus 1,990 left, shipping from 29 December 2025
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 175.30 | R 350.60 |
| 10 - 98 | R 170.92 | R 341.84 |
| 100 - 248 | R 165.79 | R 331.58 |
| 250 - 498 | R 159.16 | R 318.32 |
| 500 + | R 152.795 | R 305.59 |
*price indicative
- RS stock no.:
- 221-6706
- Mfr. Part No.:
- NTBL050N65S3H
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 49A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | H-PSOF | |
| Series | NTBL050N65S | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 305W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 11.47mm | |
| Width | 2.4 mm | |
| Length | 10.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 49A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type H-PSOF | ||
Series NTBL050N65S | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 305W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 11.47mm | ||
Width 2.4 mm | ||
Length 10.8mm | ||
Automotive Standard No | ||
The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Ultra low gate charge
low effective output capacitance 909 pF
100% avalanche tested
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