Specification

Technical data sheets

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Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	49A
	Maximum Drain Source Voltage Vds	650V
	Series	NTBL050N65S
	Package Type	H-PSOF
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	50mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	98nC
	Maximum Power Dissipation Pd	305W
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	11.47mm
	Width	2.4 mm
	Length	10.8mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 49A
	Maximum Drain Source Voltage Vds 650V
	Series NTBL050N65S
	Package Type H-PSOF
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 50mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 98nC
	Maximum Power Dissipation Pd 305W
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 11.47mm
	Width 2.4 mm
	Length 10.8mm
	Automotive Standard No

Datasheet - NTBL050N65S3H

The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.

Ultra low gate charge

low effective output capacitance 909 pF

100% avalanche tested

onsemi NTBL050N65S Type N-Channel MOSFET, 49 A, 650 V Enhancement, 8-Pin H-PSOF

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