onsemi SUPERFET III Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin H-PSOF
- RS stock no.:
- 230-9082
- Mfr. Part No.:
- NTBL082N65S3HF
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 reel of 2000 units)*
R 169 466,00
(exc. VAT)
R 194 886,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 2,000 unit(s), ready to ship from another location
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 - 2000 | R 84.733 | R 169,466.00 |
| 4000 + | R 82.614 | R 165,228.00 |
*price indicative
- RS stock no.:
- 230-9082
- Mfr. Part No.:
- NTBL082N65S3HF
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | H-PSOF | |
| Series | SUPERFET III | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 313W | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.4 mm | |
| Height | 13.28mm | |
| Length | 10.2mm | |
| Standards/Approvals | Pb-Free Halide free non AEC-Q and PPAP | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type H-PSOF | ||
Series SUPERFET III | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 313W | ||
Maximum Operating Temperature 175°C | ||
Width 2.4 mm | ||
Height 13.28mm | ||
Length 10.2mm | ||
Standards/Approvals Pb-Free Halide free non AEC-Q and PPAP | ||
Automotive Standard No | ||
The ON Semiconductor series SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency.
High power density
Kelvin Source Configuration
Low gate noise and switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Moisture Sensitivity Level 1 guarantee
High reliability in humid ambient condition
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