Infineon HEXFET N-Channel MOSFET & Diode, 5.4 A, 100 V Enhancement, 8-Pin SO-8 IRF7490TRPBF
- RS stock no.:
- 220-7479
- Distrelec Article No.:
- 304-39-417
- Mfr. Part No.:
- IRF7490TRPBF
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 15 units)*
R 230,325
(exc. VAT)
R 264,87
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 11,850 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | R 15.355 | R 230.33 |
| 30 - 75 | R 14.971 | R 224.57 |
| 90 - 225 | R 14.522 | R 217.83 |
| 240 - 465 | R 13.941 | R 209.12 |
| 480 + | R 13.384 | R 200.76 |
*price indicative
- RS stock no.:
- 220-7479
- Distrelec Article No.:
- 304-39-417
- Mfr. Part No.:
- IRF7490TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 5.4A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 39mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 5.4A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 39mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 4mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.75mm | ||
Automotive Standard No | ||
The Infineon's OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100KHz
Industry standard surface-mount power package
Capable of being wave-soldered
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