Infineon OptiMOS Type N-Channel MOSFET & Diode, 70 A, 120 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

R 14 826,00

(exc. VAT)

R 17 050,00

(inc. VAT)

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  • Shipping from 04 January 2027
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Units
Per unit
Per Reel*
1000 - 1000R 14.826R 14,826.00
2000 - 2000R 14.455R 14,455.00
3000 +R 14.022R 14,022.00

*price indicative

RS stock no.:
220-7394
Mfr. Part No.:
IPB70N12S311ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

120V

Series

OptiMOS

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11.3mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon offers a wide portfolio on Automotive power MOSFETs with a voltage of 120V, 150V, 200V, 250V and 300V targeting applications such inverters for Light Electric Vehicles (LSEV, e-Motorcycles, e-Scooters), DC/AC conversion, and On-Board Chargers as well as HV-12V DC/DC Synchronous Rectification for Battery Electric Vehicles (BEV)for the emerging 48V market, check out our newly released 100V products in TOLL (HSOF-8), TOLG (HSOG-8) and SSO8 (TDSON-8).

OptiMOSTM - power MOSFET for automotive applications

N-channel - Enhancement mode

Automotive AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

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