Infineon OptiMOS Type N-Channel MOSFET & Diode, 16 A, 300 V Enhancement, 8-Pin TDSON BSC13DN30NSFDATMA1
- RS stock no.:
- 220-7357
- Mfr. Part No.:
- BSC13DN30NSFDATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 118,46
(exc. VAT)
R 136,23
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 3,655 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 23.692 | R 118.46 |
| 10 - 95 | R 23.10 | R 115.50 |
| 100 - 245 | R 22.406 | R 112.03 |
| 250 - 495 | R 21.51 | R 107.55 |
| 500 + | R 20.65 | R 103.25 |
*price indicative
- RS stock no.:
- 220-7357
- Mfr. Part No.:
- BSC13DN30NSFDATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 300V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.35mm | |
| Standards/Approvals | No | |
| Height | 1.2mm | |
| Width | 6.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 300V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 5.35mm | ||
Standards/Approvals No | ||
Height 1.2mm | ||
Width 6.1 mm | ||
Automotive Standard No | ||
The Infineon OptiMOS Fast Diode (FD) 200V, 250V and 300V is optimized for body diode hard commutation. These devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter.
Improved hard commutation ruggedness
Optimized hard switching behaviour
Industry’s lowest R ds(on), Q g and Q rr
RoHS compliant - halogen free
Highest system reliability
System cost reduction
Highest efficiency and power density
Easy-to-design products
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