Infineon CoolMOS P7 Type N-Channel MOSFET, 206 A, 650 V Enhancement, 3-Pin TO-247 IPW60R045P7XKSA1
- RS stock no.:
- 219-6023
- Mfr. Part No.:
- IPW60R045P7XKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 unit)*
R 153,02
(exc. VAT)
R 175,97
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 357 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | R 153.02 |
| 10 - 99 | R 149.19 |
| 100 - 249 | R 144.71 |
| 250 - 499 | R 138.92 |
| 500 + | R 133.36 |
*price indicative
- RS stock no.:
- 219-6023
- Mfr. Part No.:
- IPW60R045P7XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 206A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 201W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 5.21mm | |
| Width | 21.1 mm | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 206A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 201W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 5.21mm | ||
Width 21.1 mm | ||
Length 16.13mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor RG
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Related links
- Infineon CoolMOS™ P7 Dual N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R045P7XKSA1
- Infineon CoolMOS™ P7 Dual N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R024P7XKSA1
- Infineon CoolMOS™ P7 Dual N-Channel MOSFET Transistor & Diode 650 V, 4-Pin TO-247-4 IPZA60R060P7XKSA1
- Infineon CoolMOS™ CFD7 Dual N-Channel MOSFET 650 V, 3-Pin TO-247 IPA60R280CFD7XKSA1
- STMicroelectronics Dual N-Channel MOSFET 650 V, 3-Pin TO-247 STWA68N65DM6AG
- Infineon CoolMOS CSFD Dual N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R037CSFDXKSA1
- Infineon CoolMOS CSFD Dual N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R024CFD7XKSA1
- Infineon CoolMOS™ P6 Dual N-Channel MOSFET Transistor & Diode 650 V, 3-Pin TO-247 IPW60R099P6XKSA1