Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 16 A, 650 V Enhancement, 3-Pin SOT-223 IPN60R600P7SATMA1

RS stock no.:: 220-7437
Mfr. Part No.:: IPN60R600P7SATMA1
Manufacturer:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 16 A, 650 V Enhancement, 3-Pin SOT-223 IPN60R600P7SATMA1

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Bulk discount available

Subtotal (1 pack of 20 units)*

R 261,04

(exc. VAT)

R 300,20

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

Plus 1,940 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Pack*
20 - 20	R 13.052	R 261.04
40 - 80	R 12.725	R 254.50
100 - 220	R 12.344	R 246.88
240 - 480	R 11.85	R 237.00
500 +	R 11.376	R 227.52

*price indicative

RS stock no.:: 220-7437
Mfr. Part No.:: IPN60R600P7SATMA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	16A
	Maximum Drain Source Voltage Vds	650V
	Series	CoolMOS P7
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	600mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	9nC
	Maximum Power Dissipation Pd	7W
	Width	3.7 mm
	Standards/Approvals	No
	Height	1.8mm
	Length	6.7mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 16A
	Maximum Drain Source Voltage Vds 650V
	Series CoolMOS P7
	Package Type SOT-223
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 600mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 9nC
	Maximum Power Dissipation Pd 7W
	Width 3.7 mm
	Standards/Approvals No
	Height 1.8mm
	Length 6.7mm
	Automotive Standard No

Datasheet - IPN60R600P7SATMA1

The Infineon Cool MOS P7 super junction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes Cool MOS P7 in SOT-223 a perfect fit for its target applications. The 700V and 800V Cool MOS P7 are optimized for fly back topologies. 600V Cool MOS P7 SJ MOSFET is suitable for hard as well as so switching topologies (Fly back, PFC and LLC).

Ease of use and fast design-in through low ringing tendency and usage

across PFC and PWM stages

Simplified thermal management due to low switching and conduction

losses

Increased power density solutions enabled by using product swith

smaller foot print and higher manufacturing quality due to>2kVESD

protection

Suitable for awide variety of applications and power ranges

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 16 A, 650 V Enhancement, 3-Pin SOT-223 IPN60R600P7SATMA1

FREE delivery for orders over R 1,500.00

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