Infineon CoolMOS P7 Type N-Channel MOSFET, 26 A, 650 V Enhancement, 3-Pin TO-247
- RS stock no.:
- 219-5980
- Mfr. Part No.:
- IPA60R360P7XKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 tube of 50 units)*
R 574,60
(exc. VAT)
R 660,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 600 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 100 | R 11.492 | R 574.60 |
| 150 - 200 | R 11.204 | R 560.20 |
| 250 + | R 10.868 | R 543.40 |
*price indicative
- RS stock no.:
- 219-5980
- Mfr. Part No.:
- IPA60R360P7XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS P7 | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS P7 | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMO P7 optimized superjunction MOSFETs merging high energy efficiency with ease-of-use is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS 7th generation platform ensure its high efficiency.
MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
Excellent ruggedness during hard commutation of the body diode seen in LLC topology
Suitable for a wide variety of end applications and output powers
Parts available suitable for consumer and industrial applications
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