Infineon HEXFET Type N-Channel MOSFET, 128 A, 75 V, 3-Pin TO-263 IRFS3307ZTRRPBF

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Subtotal (1 pack of 10 units)*

R 323,42

(exc. VAT)

R 371,93

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 10R 32.342R 323.42
20 - 90R 31.533R 315.33
100 - 240R 30.587R 305.87
250 - 490R 29.364R 293.64
500 +R 28.189R 281.89

*price indicative

Packaging Options:
RS stock no.:
218-3118
Mfr. Part No.:
IRFS3307ZTRRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

128A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5.8mΩ

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

110nC

Maximum Power Dissipation Pd

230W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

4.83 mm

Length

10.67mm

Height

9.65mm

Automotive Standard

No

The Infineon HEXFET series single N-Channel Power MOSFET integrated with D2PAK (TO-263) type package.

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dV/dt and dI/dt Capability

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