Infineon HEXFET Type N-Channel MOSFET, 269 A, 75 V Enhancement, 7-Pin TO-263 IRFS7730TRL7PP
- RS stock no.:
- 218-3124
- Mfr. Part No.:
- IRFS7730TRL7PP
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 184,34
(exc. VAT)
R 211,99
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,225 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 36.868 | R 184.34 |
| 10 - 95 | R 35.946 | R 179.73 |
| 100 - 245 | R 34.868 | R 174.34 |
| 250 - 495 | R 33.474 | R 167.37 |
| 500 + | R 32.136 | R 160.68 |
*price indicative
- RS stock no.:
- 218-3124
- Mfr. Part No.:
- IRFS7730TRL7PP
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 269A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 428nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Height | 9.65mm | |
| Width | 4.83 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 269A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 428nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Height 9.65mm | ||
Width 4.83 mm | ||
Automotive Standard No | ||
The Infineon HEXFET series single N-Channel Power MOSFET. Integrated with D2PAK 7pin (TO-263 7pin) type package.
Lead-free, RoHS compliant
Related links
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- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263
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