Infineon HEXFET Type N-Channel MOSFET, 170 A, 75 V TO-263

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Subtotal (1 reel of 800 units)*

R 28 532,80

(exc. VAT)

R 32 812,80

(inc. VAT)

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Units
Per unit
Per Reel*
800 - 800R 35.666R 28,532.80
1600 - 1600R 34.774R 27,819.20
2400 +R 33.731R 26,984.80

*price indicative

RS stock no.:
217-2631
Mfr. Part No.:
IRFS3207ZTRRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

170A

Maximum Drain Source Voltage Vds

75V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

4.1mΩ

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

170nC

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Height

9.65mm

Standards/Approvals

No

Width

4.83 mm

Length

10.67mm

Automotive Standard

No

The Infineon 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package.

Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dV/dt and dI/dt Capability

Lead-Free

RoHS Compliant, Halogen-Free

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