Infineon HEXFET Type N-Channel MOSFET, 93 A, 20 V, 3-Pin TO-252 IRFR3711ZTRPBF
- RS stock no.:
- 218-3109
- Mfr. Part No.:
- IRFR3711ZTRPBF
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 20 units)*
R 300,64
(exc. VAT)
R 345,74
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 30 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | R 15.032 | R 300.64 |
| 40 - 80 | R 14.656 | R 293.12 |
| 100 - 220 | R 14.216 | R 284.32 |
| 240 - 480 | R 13.648 | R 272.96 |
| 500 + | R 13.102 | R 262.04 |
*price indicative
- RS stock no.:
- 218-3109
- Mfr. Part No.:
- IRFR3711ZTRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 93A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.8mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 10V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 79W | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 2.39 mm | |
| Length | 6.73mm | |
| Height | 6.22mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 93A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.8mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 10V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 79W | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 2.39 mm | ||
Length 6.73mm | ||
Height 6.22mm | ||
Automotive Standard No | ||
The Infineon HEXFET series 20V Single N-Channel Power MOSFET. This device is ideal for low frequency applications requiring performance and ruggedness.
Ultra-Low Gate Impedance
Lead free
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