Infineon HEXFET N-Channel MOSFET, 93 A, 250 V, 3-Pin TO-247AC IRFP4768PBF
- RS stock no.:
- 124-9021
- Mfr. Part No.:
- IRFP4768PBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 tube of 25 units)*
R 2 431 825
(exc. VAT)
R 2 796 60
(inc. VAT)
FREE delivery for orders over R 1 500,00
In Stock
- 550 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 25 | R 97,273 | R 2 431,825 |
| 50 - 100 | R 94,841 | R 2 371,025 |
| 125 - 225 | R 91,996 | R 2 299,90 |
| 250 - 475 | R 88,316 | R 2 207,90 |
| 500 + | R 84,783 | R 2 119,575 |
*price indicative
- RS stock no.:
- 124-9021
- Mfr. Part No.:
- IRFP4768PBF
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 93 A | |
| Maximum Drain Source Voltage | 250 V | |
| Package Type | TO-247AC | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 14.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 520 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Width | 5.31mm | |
| Transistor Material | Si | |
| Length | 15.87mm | |
| Typical Gate Charge @ Vgs | 180 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Height | 20.7mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 93 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type TO-247AC | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 14.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 520 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 5.31mm | ||
Transistor Material Si | ||
Length 15.87mm | ||
Typical Gate Charge @ Vgs 180 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Height 20.7mm | ||
Minimum Operating Temperature -55 °C | ||
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