Infineon HEXFET N-Channel MOSFET Transistor, 93 A, 20 V, 3-Pin IPAK IRFU3711ZPBF

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Subtotal (1 pack of 5 units)*

R 68,23

(exc. VAT)

R 78,465

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 20R 13.646R 68.23
25 - 45R 13.102R 65.51
50 - 95R 12.576R 62.88
100 - 245R 12.074R 60.37
250 +R 11.59R 57.95

*price indicative

RS stock no.:
688-7140
Mfr. Part No.:
IRFU3711ZPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

93 A

Maximum Drain Source Voltage

20 V

Package Type

IPAK

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.45V

Minimum Gate Threshold Voltage

1.55V

Maximum Power Dissipation

79 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

18 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Width

2.3mm

Number of Elements per Chip

1

Length

6.6mm

Height

6.1mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
MX

N-Channel Power MOSFET 12V to 25V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


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