Infineon HEXFET N-Channel MOSFET, 28 A, 150 V, 2-Pin DirectFET IRF6775MTRPBF
- RS stock no.:
- 218-3102
- Mfr. Part No.:
- IRF6775MTRPBF
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 177,66
(exc. VAT)
R 204,31
(inc. VAT)
FREE delivery for orders over R 1,500.00
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- 4,290 left, ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 17.766 | R 177.66 |
| 20 - 90 | R 17.322 | R 173.22 |
| 100 - 240 | R 16.802 | R 168.02 |
| 250 - 490 | R 16.13 | R 161.30 |
| 500 + | R 15.485 | R 154.85 |
*price indicative
- RS stock no.:
- 218-3102
- Mfr. Part No.:
- IRF6775MTRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | DirectFET | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 89W | |
| Length | 4.85mm | |
| Standards/Approvals | No | |
| Height | 0.68mm | |
| Width | 3.95mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type DirectFET | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 89W | ||
Length 4.85mm | ||
Standards/Approvals No | ||
Height 0.68mm | ||
Width 3.95mm | ||
Automotive Standard No | ||
The Infineon 150V Single N-channel HEXFET power MOSFET. This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. The lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients.
Latest MOSFET Silicon technology
Dual sided cooling compatible
Compatible with existing surface mount technologies
Lead-Free
Related links
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