Infineon HEXFET Type N-Channel MOSFET, 28 A, 150 V, 2-Pin DirectFET

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Subtotal (1 reel of 4800 units)*

R 66 369,60

(exc. VAT)

R 76 324,80

(inc. VAT)

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  • Shipping from 11 May 2026
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Units
Per unit
Per Reel*
4800 - 4800R 13.827R 66,369.60
9600 - 9600R 13.482R 64,713.60
14400 +R 13.077R 62,769.60

*price indicative

RS stock no.:
218-3101
Mfr. Part No.:
IRF6775MTRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

28A

Maximum Drain Source Voltage Vds

150V

Package Type

DirectFET

Series

HEXFET

Mount Type

Surface

Pin Count

2

Maximum Drain Source Resistance Rds

56mΩ

Maximum Power Dissipation Pd

89W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

25nC

Maximum Gate Source Voltage Vgs

20 V

Standards/Approvals

No

Width

3.95 mm

Height

0.68mm

Length

4.85mm

Automotive Standard

No

The Infineon 150V Single N-channel HEXFET power MOSFET. This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. The lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients.

Latest MOSFET Silicon technology

Dual sided cooling compatible

Compatible with existing surface mount technologies

Lead-Free

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