N-Channel MOSFET, 28 A, 55 V, 3-Pin DPAK Infineon IRLR2705TRPBF

RS stock no.:: 830-3348
Mfr. Part No.:: IRLR2705TRPBF
Manufacturer:: Infineon

N-Channel MOSFET, 28 A, 55 V, 3-Pin DPAK Infineon IRLR2705TRPBF

Bulk discount available

Subtotal (1 pack of 20 units)**

R 257 12

(exc. VAT)

R 295 68

(inc. VAT)

180 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

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Units	Per unit	Per Pack**
20 - 80	R 12,856	R 257,12
100 - 480	R 12,535	R 250,70
500 - 980	R 12,159	R 243,18
1000 - 1980	R 11,672	R 233,44
2000 +	R 11,205	R 224,10

**price indicative

RS stock no.:: 830-3348
Mfr. Part No.:: IRLR2705TRPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 28A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLR2705TRPBF

This MOSFET is engineered for outstanding performance across a range of electronic applications. Leveraging modern advancements in MOSFET technology, it plays a significant role in switching applications where efficiency and dependability are essential. Its distinct features make it an excellent option for automation and electrical systems that require high current handling and robust operation.

Features & Benefits

• High continuous drain current of 28A improves performance
• Maximum voltage rating of 55V boosts switching capabilities
• Low on-resistance of 65mΩ minimises energy loss
• Operates effectively at temperatures up to +175°C
• Designed for surface mounting in a DPAK TO-252 package for efficiency
• Single enhancement mode configuration facilitates circuit design

Applications

• Suitable for power management in industrial automation
• Ideal for energy-efficient switching in power supplies
• Commonly utilised in motor control circuits
• Appropriate for use in DC-DC converters

What is the maximum power dissipation for this component?

The maximum power dissipation is 68W, allowing for efficient heat management during operation.

How does the operating temperature range affect usage?

The device operates effectively between -55°C and +175°C, making it suitable for various environmental conditions.

Is there a specific installation method recommended for this MOSFET?

The device is designed for surface mounting using techniques like soldering to ensure reliable connections.

Can this MOSFET be used in parallel with others?

Yes, it can be used in parallel configurations, but proper thermal management is essential to prevent overheating.

What type of gate drive is recommended for optimal performance?

A logic-level gate drive is recommended for efficient switching, ensuring the device operates within its specified threshold levels.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	28 A
Maximum Drain Source Voltage	55 V
Series	HEXFET
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	65 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	68 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Width	6.22mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	25 nC @ 5 V
Length	6.73mm
Number of Elements per Chip	1
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.3V
Height	2.39mm