Infineon HEXFET N-Channel MOSFET, 28 A, 55 V Enhancement, 3-Pin TO-252 IRLR2705TRPBF
- RS stock no.:
- 830-3348
- Mfr. Part No.:
- IRLR2705TRPBF
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 20 units)*
R 175,90
(exc. VAT)
R 202,28
(inc. VAT)
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In Stock
- 60 unit(s) ready to ship from another location
- Plus 2,140 unit(s) shipping from 21 September 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 8.795 | R 175.90 |
| 100 - 480 | R 8.575 | R 171.50 |
| 500 - 980 | R 8.318 | R 166.36 |
| 1000 - 1980 | R 7.985 | R 159.70 |
| 2000 + | R 7.666 | R 153.32 |
*price indicative
- RS stock no.:
- 830-3348
- Mfr. Part No.:
- IRLR2705TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 68W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16V | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 68W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Width 6.22mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon HEXFET Series MOSFET, 28A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLR2705TRPBF
This MOSFET is engineered for outstanding performance across a range of electronic applications. Leveraging modern advancements in MOSFET technology, it plays a significant role in switching applications where efficiency and dependability are essential. Its distinct features make it an excellent option for automation and electrical systems that require high current handling and robust operation.
Features & Benefits
• High continuous drain current of 28A improves performance
• Maximum voltage rating of 55V boosts switching capabilities
• Low on-resistance of 65mΩ minimises energy loss
• Operates effectively at temperatures up to +175°C
• Designed for surface mounting in a DPAK TO-252 package for efficiency
• Single enhancement mode configuration facilitates circuit design
Applications
• Suitable for power management in industrial automation
• Ideal for energy-efficient switching in power supplies
• Commonly utilised in motor control circuits
• Appropriate for use in DC-DC converters
What is the maximum power dissipation for this component?
The maximum power dissipation is 68W, allowing for efficient heat management during operation.
How does the operating temperature range affect usage?
The device operates effectively between -55°C and +175°C, making it suitable for various environmental conditions.
Is there a specific installation method recommended for this MOSFET?
The device is designed for surface mounting using techniques like soldering to ensure reliable connections.
Can this MOSFET be used in parallel with others?
Yes, it can be used in parallel configurations, but proper thermal management is essential to prevent overheating.
What type of gate drive is recommended for optimal performance?
A logic-level gate drive is recommended for efficient switching, ensuring the device operates within its specified threshold levels.
Related links
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET & Diode 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET & Diode 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252