Infineon HEXFET Type N-Channel MOSFET, 28 A, 55 V Enhancement, 3-Pin TO-252 IRLR2705TRPBF

RS stock no.:: 830-3348
Mfr. Part No.:: IRLR2705TRPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 28 A, 55 V Enhancement, 3-Pin TO-252 IRLR2705TRPBF

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Subtotal (1 pack of 20 units)*

R 263,82

(exc. VAT)

R 303,40

(inc. VAT)

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In Stock

Plus 100 unit(s) shipping from 29 December 2025
Plus 2,140 unit(s) shipping from 05 January 2026

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Units	Per unit	Per Pack*
20 - 80	R 13.191	R 263.82
100 - 480	R 12.861	R 257.22
500 - 980	R 12.475	R 249.50
1000 - 1980	R 11.976	R 239.52
2000 +	R 11.497	R 229.94

*price indicative

RS stock no.:: 830-3348
Mfr. Part No.:: IRLR2705TRPBF
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	28A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	65mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	25nC
	Maximum Power Dissipation Pd	68W
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	16 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	6.73mm
	Height	2.39mm
	Standards/Approvals	No
	Width	6.22 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 28A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 65mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 25nC
	Maximum Power Dissipation Pd 68W
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 16 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 6.73mm
	Height 2.39mm
	Standards/Approvals No
	Width 6.22 mm
	Automotive Standard No

COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 28A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLR2705TRPBF

This MOSFET is engineered for outstanding performance across a range of electronic applications. Leveraging modern advancements in MOSFET technology, it plays a significant role in switching applications where efficiency and dependability are essential. Its distinct features make it an excellent option for automation and electrical systems that require high current handling and robust operation.

Features & Benefits

• High continuous drain current of 28A improves performance

• Maximum voltage rating of 55V boosts switching capabilities

• Low on-resistance of 65mΩ minimises energy loss

• Operates effectively at temperatures up to +175°C

• Designed for surface mounting in a DPAK TO-252 package for efficiency

• Single enhancement mode configuration facilitates circuit design

Applications

• Suitable for power management in industrial automation

• Ideal for energy-efficient switching in power supplies

• Commonly utilised in motor control circuits

• Appropriate for use in DC-DC converters

What is the maximum power dissipation for this component?

The maximum power dissipation is 68W, allowing for efficient heat management during operation.

How does the operating temperature range affect usage?

The device operates effectively between -55°C and +175°C, making it suitable for various environmental conditions.

Is there a specific installation method recommended for this MOSFET?

The device is designed for surface mounting using techniques like soldering to ensure reliable connections.

Can this MOSFET be used in parallel with others?

Yes, it can be used in parallel configurations, but proper thermal management is essential to prevent overheating.

What type of gate drive is recommended for optimal performance?

A logic-level gate drive is recommended for efficient switching, ensuring the device operates within its specified threshold levels.