Infineon HEXFET Type P-Channel MOSFET, 13 A, 150 V, 3-Pin TO-263 IRF6215STRLPBF

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Subtotal (15 units, in packs of 15)*

R 435,53

(exc. VAT)

R 500,85

(inc. VAT)

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  • Shipping from 13 October 2027
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Units
Per unit
Per Pack*
15 - 15R 29.035R 435.53
30 - 75R 28.309R 424.64
90 - 225R 27.46R 411.90
240 - 465R 26.361R 395.42
480 +R 25.307R 379.61

*price indicative

Packaging Options:
RS stock no.:
218-3098
Mfr. Part No.:
IRF6215STRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

150V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

290mΩ

Typical Gate Charge Qg @ Vgs

44nC

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

-1.6V

Length

10.67mm

Width

9.65mm

Standards/Approvals

No

Height

4.83mm

Automotive Standard

No

The Infineon IRF series single P-Channel power MOSFET. This MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It is suitable for high current applications.

Fast switching

P-channel

175°C Operating Temperature

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