Infineon HEXFET Type P-Channel MOSFET & Diode, 5.6 A, 20 V Enhancement, 2-Pin TO-263

RS stock no.:: 220-7500
Mfr. Part No.:: IRLMS6802TRPBF
Manufacturer:: Infineon

Infineon HEXFET Type P-Channel MOSFET & Diode, 5.6 A, 20 V Enhancement, 2-Pin TO-263

Image representative of range

Bulk discount available

Subtotal (1 reel of 3000 units)*

R 8 004,00

(exc. VAT)

R 9 204,00

(inc. VAT)

FREE delivery for orders over R 1,500.00

Last RS stock

Final 12,000 unit(s), ready to ship from another location

Units	Per unit	Per Reel*
3000 - 3000	R 2.668	R 8,004.00
6000 - 6000	R 2.601	R 7,803.00
9000 +	R 2.523	R 7,569.00

*price indicative

RS stock no.:: 220-7500
Mfr. Part No.:: IRLMS6802TRPBF
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET & Diode
	Channel Type	Type P
	Maximum Continuous Drain Current Id	5.6A
	Maximum Drain Source Voltage Vds	20V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Pin Count	2
	Maximum Drain Source Resistance Rds	50mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	2W
	Typical Gate Charge Qg @ Vgs	16nC
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	3mm
	Width	1 mm
	Standards/Approvals	No
	Length	3mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET & Diode
	Channel Type Type P
	Maximum Continuous Drain Current Id 5.6A
	Maximum Drain Source Voltage Vds 20V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Pin Count 2
	Maximum Drain Source Resistance Rds 50mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 2W
	Typical Gate Charge Qg @ Vgs 16nC
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 3mm
	Width 1 mm
	Standards/Approvals No
	Length 3mm
	Automotive Standard No

Datasheet - IRLMS6802TRPBF

The Infineon P-Channel MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6 package with its customized lead frame produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. The unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.

Ultra Low On-Resistance

P-Channel MOSFET

Surface Mount

Available in Tape & Reel

Lead-Free

Infineon HEXFET Type P-Channel MOSFET & Diode, 5.6 A, 20 V Enhancement, 2-Pin TO-263

FREE delivery for orders over R 1,500.00

Related links