Infineon HEXFET Type P-Channel MOSFET, -13 A, -150 V TO-252
- RS stock no.:
- 258-3985
- Mfr. Part No.:
- IRFR6215TRLPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 3000 units)*
R 28 119,00
(exc. VAT)
R 32 337,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 9.373 | R 28,119.00 |
| 6000 - 6000 | R 9.139 | R 27,417.00 |
| 9000 + | R 8.864 | R 26,592.00 |
*price indicative
- RS stock no.:
- 258-3985
- Mfr. Part No.:
- IRFR6215TRLPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -13A | |
| Maximum Drain Source Voltage Vds | -150V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 580mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Forward Voltage Vf | -1.6V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -13A | ||
Maximum Drain Source Voltage Vds -150V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 580mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Forward Voltage Vf -1.6V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon HEXFET power MOSFET is fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapour phase, infrared, or wave soldering techniques. The straight lead version is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
increased ruggedness
Wide availability from distribution partners
Industry standard qualification level
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