Infineon OptiMOS-TM3 Type N-Channel MOSFET, 45 A, 80 V N, 3-Pin TO-252 IPD135N08N3GATMA1
- RS stock no.:
- 218-3041
- Mfr. Part No.:
- IPD135N08N3GATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 296,38
(exc. VAT)
R 340,84
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 22,700 unit(s) shipping from 30 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | R 14.819 | R 296.38 |
| 40 - 80 | R 14.449 | R 288.98 |
| 100 - 220 | R 14.015 | R 280.30 |
| 240 - 480 | R 13.455 | R 269.10 |
| 500 + | R 12.917 | R 258.34 |
*price indicative
- RS stock no.:
- 218-3041
- Mfr. Part No.:
- IPD135N08N3GATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS-TM3 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13.5mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 79W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS-TM3 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13.5mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 79W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ series N-channel power MOSFET. The OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).
N-channel, normal level
100% avalanche tested
Pb-free plating
Related links
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 3-Pin DPAK IPD135N08N3GATMA1
- onsemi N-Channel MOSFET 40 V, 3-Pin DPAK NVD5C478NLT4G
- STMicroelectronics STripFET H7 N-Channel MOSFET 100 V, 3-Pin DPAK STD45N10F7
- Infineon OptiMOS™ 5 N-Channel MOSFET 60 V, 3-Pin DPAK IPD053N06NATMA1
- Infineon N-Channel MOSFET 80 V, 3-Pin DPAK IPD046N08N5ATMA1
- Infineon OptiMOS™ -T2 Silicon N-Channel MOSFET 80 V, 3-Pin DPAK IPD50N08S413ATMA1
- Infineon CoolMOS™ Silicon N-Channel MOSFET 80 V, 3-Pin DPAK IPD90N08S405ATMA1
- Infineon HEXFET N-Channel MOSFET 80 V, 3-Pin DPAK IRLR2908TRPBF