Infineon OptiMOS-TM3 Type N-Channel MOSFET, 45 A, 80 V N, 3-Pin TO-252
- RS stock no.:
- 218-3039
- Mfr. Part No.:
- IPD135N08N3GATMA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionSubtotal (1 reel of 2500 units)*
R 20 295,00
(exc. VAT)
R 23 340,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 7,500 unit(s) ready to ship from another location
- Plus 2,500 unit(s) shipping from 30 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | R 8.118 | R 20,295.00 |
| 5000 - 5000 | R 7.915 | R 19,787.50 |
| 7500 + | R 7.678 | R 19,195.00 |
*price indicative
- RS stock no.:
- 218-3039
- Mfr. Part No.:
- IPD135N08N3GATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-252 | |
| Series | OptiMOS-TM3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13.5mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 79W | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-252 | ||
Series OptiMOS-TM3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13.5mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 79W | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Operating Temperature 175°C | ||
Height 2.41mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS™ series N-channel power MOSFET. The OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).
N-channel, normal level
100% avalanche tested
Pb-free plating
Related links
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