Infineon OptiMOS-TM3 Type N-Channel MOSFET, 114 A, 40 V Enhancement, 8-Pin TSDSON BSZ028N04LSATMA1

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Subtotal (1 pack of 15 units)*

R 259,335

(exc. VAT)

R 298,23

(inc. VAT)

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Units
Per unit
Per Pack*
15 - 15R 17.289R 259.34
30 - 75R 16.857R 252.86
90 - 225R 16.351R 245.27
240 - 465R 15.697R 235.46
480 +R 15.069R 226.04

*price indicative

Packaging Options:
RS stock no.:
222-4627
Mfr. Part No.:
BSZ028N04LSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

114A

Maximum Drain Source Voltage Vds

40V

Package Type

TSDSON

Series

OptiMOS-TM3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.8mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

63W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

32nC

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Height

1.2mm

Width

6.1 mm

Length

5.35mm

Standards/Approvals

No

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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