Infineon OptiMOS-T2 Type N-Channel MOSFET, 180 A, 40 V Enhancement, 7-Pin TO-263 IPB180N04S4H0ATMA1

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Subtotal (1 pack of 5 units)*

R 313,97

(exc. VAT)

R 361,065

(inc. VAT)

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  • 440 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
5 - 5R 62.794R 313.97
10 - 95R 61.224R 306.12
100 - 245R 59.388R 296.94
250 - 495R 57.012R 285.06
500 +R 54.732R 273.66

*price indicative

Packaging Options:
RS stock no.:
218-3036
Mfr. Part No.:
IPB180N04S4H0ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

OptiMOS-T2

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

1.1mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon OptiMOS™-T2 series N-channel automotive MOSFET. It has TO263-7-3 package type.

175°C operating temperature

Ultra low Rds(on)

100% Avalanche tested

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