Infineon OptiMOS-T2 Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263 IPB120N06S402ATMA2

RS stock no.:: 826-9235
Mfr. Part No.:: IPB120N06S402ATMA2
Manufacturer:: Infineon

Infineon OptiMOS-T2 Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263 IPB120N06S402ATMA2

Image representative of range

Bulk discount available

Subtotal (1 pack of 10 units)*

R 359,67

(exc. VAT)

R 413,62

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

980 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 - 190	R 35.967	R 359.67
200 - 490	R 35.068	R 350.68
500 - 990	R 34.016	R 340.16
1000 - 1990	R 32.655	R 326.55
2000 +	R 31.349	R 313.49

*price indicative

RS stock no.:: 826-9235
Mfr. Part No.:: IPB120N06S402ATMA2
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	120A
	Maximum Drain Source Voltage Vds	60V
	Series	OptiMOS-T2
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	2.8mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	150nC
	Maximum Power Dissipation Pd	188W
	Maximum Operating Temperature	175°C
	Height	4.4mm
	Width	9.25 mm
	Length	10mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 120A
	Maximum Drain Source Voltage Vds 60V
	Series OptiMOS-T2
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 2.8mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 150nC
	Maximum Power Dissipation Pd 188W
	Maximum Operating Temperature 175°C
	Height 4.4mm
	Width 9.25 mm
	Length 10mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Not Applicable

Infineon OptiMOS™ T2 Power MOSFETs

Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode

AEC qualified

MSL1 up to 260°C Peak reflow

175°C operating temperature

Green Product (RoHS compliant)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS-T2 Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263 IPB120N06S402ATMA2

FREE delivery for orders over R 1,500.00

Infineon OptiMOS™ T2 Power MOSFETs

MOSFET Transistors, Infineon

Related links