Infineon OptiMOS-T2 Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

R 34 797,00

(exc. VAT)

R 40 017,00

(inc. VAT)

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  • Shipping from 30 March 2026
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Units
Per unit
Per Reel*
1000 - 1000R 34.797R 34,797.00
2000 - 2000R 33.927R 33,927.00
3000 +R 32.91R 32,910.00

*price indicative

RS stock no.:
218-3032
Mfr. Part No.:
IPB120N06S4H1ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS-T2

Package Type

TO-263

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon OptiMOS™-T2 series N-channel power MOSFET. It has low switching and conduction power losses for high thermal efficiency.

N-channel - Enhancement mode

175°C operating temperature

100% Avalanche tested

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