Infineon OptiMOS 5 Type N-Channel MOSFET, 40 A, 80 V N, 8-Pin PQFN BSZ110N08NS5ATMA1

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Subtotal (1 pack of 20 units)*

R 343,08

(exc. VAT)

R 394,54

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 20R 17.154R 343.08
40 - 80R 16.725R 334.50
100 - 220R 16.223R 324.46
240 - 480R 15.574R 311.48
500 +R 14.951R 299.02

*price indicative

Packaging Options:
RS stock no.:
214-4345
Mfr. Part No.:
BSZ110N08NS5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS 5

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

50W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

15nC

Maximum Operating Temperature

150°C

Width

3.4 mm

Standards/Approvals

No

Height

1.1mm

Length

3.4mm

Automotive Standard

No

The 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

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