Infineon OptiMOS 5 Type N-Channel MOSFET, 176 A, 25 V Enhancement, 8-Pin TSDSON BSZ014NE2LS5IFATMA1
- RS stock no.:
- 214-8984
- Mfr. Part No.:
- BSZ014NE2LS5IFATMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 10 units)*
R 115,20
(exc. VAT)
R 132,50
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 70 unit(s) shipping from 19 January 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 11.52 | R 115.20 |
| 20 - 90 | R 11.232 | R 112.32 |
| 100 - 240 | R 10.895 | R 108.95 |
| 250 - 490 | R 10.459 | R 104.59 |
| 500 + | R 10.041 | R 100.41 |
*price indicative
- RS stock no.:
- 214-8984
- Mfr. Part No.:
- BSZ014NE2LS5IFATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 176A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | OptiMOS 5 | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Forward Voltage Vf | 0.6V | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.35mm | |
| Width | 6.1 mm | |
| Height | 1.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 176A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series OptiMOS 5 | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Forward Voltage Vf 0.6V | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Operating Temperature 150°C | ||
Length 5.35mm | ||
Width 6.1 mm | ||
Height 1.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon range offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and Strong IRFET families. With the OptiMOS-5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Monolithic integrated Schottky like diode
100% avalanche tested
Related links
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- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V Enhancement, 8-Pin HSOF
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSOF
- Infineon OptiMOS 5 Type N-Channel MOSFET 80 V Enhancement, 8-Pin HSOF