Infineon OptiMOS 5 Type N-Channel MOSFET, 176 A, 25 V Enhancement, 8-Pin TSDSON BSZ014NE2LS5IFATMA1

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Subtotal (1 pack of 10 units)*

R 115,20

(exc. VAT)

R 132,50

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 10R 11.52R 115.20
20 - 90R 11.232R 112.32
100 - 240R 10.895R 108.95
250 - 490R 10.459R 104.59
500 +R 10.041R 100.41

*price indicative

Packaging Options:
RS stock no.:
214-8984
Mfr. Part No.:
BSZ014NE2LS5IFATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

176A

Maximum Drain Source Voltage Vds

25V

Package Type

TSDSON

Series

OptiMOS 5

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.45mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.6V

Typical Gate Charge Qg @ Vgs

11nC

Maximum Power Dissipation Pd

69W

Maximum Operating Temperature

150°C

Width

6.1 mm

Length

5.35mm

Height

1.2mm

Standards/Approvals

No

Automotive Standard

No

The Infineon range offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and Strong IRFET families. With the OptiMOS-5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Monolithic integrated Schottky like diode

100% avalanche tested

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