Infineon HEXFET Type N-Channel MOSFET, 170 A, 75 V TO-263 IRFS3207ZTRRPBF

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Subtotal (1 pack of 5 units)*

R 350,41

(exc. VAT)

R 402,97

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 70.082R 350.41
10 - 95R 68.33R 341.65
100 - 245R 66.28R 331.40
250 - 495R 63.628R 318.14
500 +R 61.082R 305.41

*price indicative

Packaging Options:
RS stock no.:
217-2632
Mfr. Part No.:
IRFS3207ZTRRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

170A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

4.1mΩ

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

170nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

9.65mm

Width

4.83 mm

Standards/Approvals

No

Length

10.67mm

Automotive Standard

No

The Infineon 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package.

Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dV/dt and dI/dt Capability

Lead-Free

RoHS Compliant, Halogen-Free

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