Infineon HEXFET N-Channel MOSFET, 170 A, 75 V, 3-Pin TO-263 IRF2907ZSTRLPBF
- RS stock no.:
- 214-4446
- Mfr. Part No.:
- IRF2907ZSTRLPBF
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 285,60
(exc. VAT)
R 328,45
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 57.12 | R 285.60 |
| 10 - 95 | R 55.692 | R 278.46 |
| 100 - 245 | R 54.022 | R 270.11 |
| 250 - 495 | R 51.862 | R 259.31 |
| 500 + | R 49.788 | R 248.94 |
*price indicative
- RS stock no.:
- 214-4446
- Mfr. Part No.:
- IRF2907ZSTRLPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 170A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 300W | |
| Typical Gate Charge Qg @ Vgs | 270nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 170A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 300W | ||
Typical Gate Charge Qg @ Vgs 270nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. It has fast switching speed and improved repetitive avalanche rating.
It is Lead-free
It is capable of being wave soldered
Related links
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