Infineon HEXFET Type N-Channel MOSFET, 170 A, 75 V TO-252

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Bulk discount available

Subtotal (1 reel of 800 units)*

R 22 615,20

(exc. VAT)

R 26 007,20

(inc. VAT)

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  • 1,600 unit(s) ready to ship from another location
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Units
Per unit
Per Reel*
800 - 800R 28.269R 22,615.20
1600 - 1600R 27.563R 22,050.40
2400 +R 26.736R 21,388.80

*price indicative

RS stock no.:
217-2628
Mfr. Part No.:
IRFS3207TRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

170A

Maximum Drain Source Voltage Vds

75V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Maximum Drain Source Resistance Rds

4.5mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

300W

Typical Gate Charge Qg @ Vgs

260nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

4.83 mm

Height

9.65mm

Standards/Approvals

No

Length

10.67mm

Automotive Standard

No

The Infineon 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package.

Improved Gate Avalanche and Dynamic dV/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dV/dt and dI/dt Capability

Lead-Free

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