Infineon CoolMOS Type N-Channel MOSFET, 7.2 A, 650 V N, 3-Pin TO-220 IPA65R1K0CEXKSA1
- RS stock no.:
- 217-2487
- Distrelec Article No.:
- 304-39-405
- Mfr. Part No.:
- IPA65R1K0CEXKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 127,50
(exc. VAT)
R 146,62
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 620 unit(s) shipping from 10 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | R 6.375 | R 127.50 |
| 40 - 80 | R 6.215 | R 124.30 |
| 100 - 220 | R 6.029 | R 120.58 |
| 240 - 480 | R 5.788 | R 115.76 |
| 500 + | R 5.556 | R 111.12 |
*price indicative
- RS stock no.:
- 217-2487
- Distrelec Article No.:
- 304-39-405
- Mfr. Part No.:
- IPA65R1K0CEXKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.2A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | N | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 68W | |
| Typical Gate Charge Qg @ Vgs | 15.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.65mm | |
| Standards/Approvals | No | |
| Height | 29.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.2A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode N | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 68W | ||
Typical Gate Charge Qg @ Vgs 15.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.65mm | ||
Standards/Approvals No | ||
Height 29.75mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Extremely low losses due to very low FOMRds on*Qg and Eoss
Very high commutation ruggedness
Easy-to-use/drive
Pb-free plating, Halogen free mold compound
Qualified for standard grade applications
Related links
- Infineon CoolMOS Type N-Channel MOSFET 650 V N, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 650 V N, 3-Pin TO-220
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