Infineon CoolMOS P7 Type N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin TO-251

RS stock no.:: 217-2580
Mfr. Part No.:: IPS70R360P7SAKMA1
Manufacturer:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin TO-251

Image representative of range

Bulk discount available

Subtotal (1 tube of 75 units)*

R 804,525

(exc. VAT)

R 925,20

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

150 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
75 - 150	R 10.727	R 804.53
225 - 300	R 10.459	R 784.43
375 +	R 10.145	R 760.88

*price indicative

RS stock no.:: 217-2580
Mfr. Part No.:: IPS70R360P7SAKMA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	12.5A
	Maximum Drain Source Voltage Vds	700V
	Package Type	TO-251
	Series	CoolMOS P7
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	16.4nC
	Minimum Operating Temperature	-40°C
	Maximum Power Dissipation Pd	53W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Height	9.82mm
	Standards/Approvals	No
	Width	2.4 mm
	Length	6.73mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 12.5A
	Maximum Drain Source Voltage Vds 700V
	Package Type TO-251
	Series CoolMOS P7
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 16.4nC
	Minimum Operating Temperature -40°C
	Maximum Power Dissipation Pd 53W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Height 9.82mm
	Standards/Approvals No
	Width 2.4 mm
	Length 6.73mm
	Automotive Standard AEC-Q101

Datasheet - IPS70R360P7SAKMA1

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV etc. The new series provides all the benefits of a fast switching Super junction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.

Extremely low losses due to very low FOMRDS(on)*Qg and RDS(on)*Eoss

Excellent thermal behaviour

Integrated ESD protection diode

Low switching losses(Eoss)

Product validation acc. JEDEC Standard

Infineon CoolMOS P7 Type N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin TO-251

FREE delivery for orders over R 1,500.00

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