Infineon OptiMOS-T2 Type N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-220

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Bulk discount available

Subtotal (1 tube of 50 units)*

R 946,45

(exc. VAT)

R 1 088,40

(inc. VAT)

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  • Shipping from 05 January 2027
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Units
Per unit
Per Tube*
50 - 100R 18.929R 946.45
150 - 200R 18.456R 922.80
250 +R 17.902R 895.10

*price indicative

RS stock no.:
215-2547
Mfr. Part No.:
IPP80N06S407AKSA2
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS-T2

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

7.1mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

56nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

79W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS® -T2 Power-Transistor series has 60V maximum drain source voltage with TO-220 package type. It is N-Channel with 7.1 mΩ max maximum drain source resistance.

N-channel - Enhancement mode

AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green Product (RoHS compliant)

100% Avalanche tested

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