Infineon OptiMOS -T2 Type N-Channel Power Transistor, 80 A, 60 V Enhancement, 3-Pin TO-263 IPB80N06S4L05ATMA2

RS stock no.:: 826-8998
Mfr. Part No.:: IPB80N06S4L05ATMA2
Manufacturer:: Infineon

Infineon OptiMOS -T2 Type N-Channel Power Transistor, 80 A, 60 V Enhancement, 3-Pin TO-263 IPB80N06S4L05ATMA2

Image representative of range

Bulk discount available

Subtotal (1 pack of 20 units)*

R 262,00

(exc. VAT)

R 301,20

(inc. VAT)

FREE delivery for orders over R 1,500.00

Last RS stock

Final 620 unit(s), ready to ship from another location

Units	Per unit	Per Pack*
20 - 380	R 13.10	R 262.00
400 - 780	R 12.772	R 255.44
800 - 1180	R 12.389	R 247.78
1200 - 2380	R 11.894	R 237.88
2400 +	R 11.418	R 228.36

*price indicative

RS stock no.:: 826-8998
Mfr. Part No.:: IPB80N06S4L05ATMA2
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	Power Transistor
	Maximum Continuous Drain Current Id	80A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-263
	Series	OptiMOS -T2
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	4.8mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	107W
	Maximum Gate Source Voltage Vgs	±16 V
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	83nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Length	10mm
	Width	9.25 mm
	Height	4.4mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type Power Transistor
	Maximum Continuous Drain Current Id 80A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-263
	Series OptiMOS -T2
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 4.8mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 107W
	Maximum Gate Source Voltage Vgs ±16 V
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 83nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Length 10mm
	Width 9.25 mm
	Height 4.4mm
	Automotive Standard AEC-Q101

Not Applicable

Infineon OptiMOS™ T2 Power MOSFETs

Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode

AEC qualified

MSL1 up to 260°C Peak reflow

175°C operating temperature

Green Product (RoHS compliant)

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Infineon OptiMOS -T2 Type N-Channel Power Transistor, 80 A, 60 V Enhancement, 3-Pin TO-263 IPB80N06S4L05ATMA2

FREE delivery for orders over R 1,500.00

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