Infineon OptiMOS -T2 Type N-Channel Power Transistor, 80 A, 60 V Enhancement, 3-Pin TO-263 IPB80N06S4L05ATMA2
- RS stock no.:
- 826-8998
- Mfr. Part No.:
- IPB80N06S4L05ATMA2
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 20 units)*
R 256,28
(exc. VAT)
R 294,72
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 520 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 380 | R 12.814 | R 256.28 |
| 400 - 780 | R 12.494 | R 249.88 |
| 800 - 1180 | R 12.119 | R 242.38 |
| 1200 - 2380 | R 11.634 | R 232.68 |
| 2400 + | R 11.169 | R 223.38 |
*price indicative
- RS stock no.:
- 826-8998
- Mfr. Part No.:
- IPB80N06S4L05ATMA2
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | OptiMOS -T2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 83nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 107W | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.4mm | |
| Standards/Approvals | RoHS | |
| Length | 10mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series OptiMOS -T2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 83nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 107W | ||
Maximum Operating Temperature 175°C | ||
Height 4.4mm | ||
Standards/Approvals RoHS | ||
Length 10mm | ||
Automotive Standard AEC-Q101 | ||
Not Applicable
Infineon OptiMOS™ T2 Power MOSFETs
Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C Peak reflow
175°C operating temperature
Green Product (RoHS compliant)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
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- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS-T2 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-263