Infineon OptiMOS-T2 Type N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-262 IPI80N06S4L07AKSA2
- RS stock no.:
- 214-9068
- Mfr. Part No.:
- IPI80N06S4L07AKSA2
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 117,09
(exc. VAT)
R 134,65
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 260 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 11.709 | R 117.09 |
| 20 - 90 | R 11.416 | R 114.16 |
| 100 - 240 | R 11.074 | R 110.74 |
| 250 - 490 | R 10.631 | R 106.31 |
| 500 + | R 10.206 | R 102.06 |
*price indicative
- RS stock no.:
- 214-9068
- Mfr. Part No.:
- IPI80N06S4L07AKSA2
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS-T2 | |
| Package Type | TO-262 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 79W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 23.45mm | |
| Standards/Approvals | No | |
| Length | 10.2mm | |
| Width | 4.4 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS-T2 | ||
Package Type TO-262 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 79W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 23.45mm | ||
Standards/Approvals No | ||
Length 10.2mm | ||
Width 4.4 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
The product is AEC Q101 qualified
It has 175°C operating temperature
100% Avalanche tested
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